Disilicide solid solutions, phase diagram, and resistivities. II. TaSi 2-WSi2
- P. Gas
- J. Tardy
- et al.
- 1987
- Journal of Applied Physics
Publications
Date
Featured collections
Popular topics
111 results for F.K. LeGoues
The microstructure of high-critical current superconducting films
- P. Chaudhari
- F.K. LeGoues
- et al.
- 1987
- Science
Ion beam amorphization of YBa2Cu3Ox
- G.J. Clark
- F. Legoues
- et al.
- 1987
- Applied Physics Letters
Formation of intermediate phases, Ni3Si2 and Pt 6Si5: Nucleation, identification, and resistivity
- P. Gas
- F.M. D'Heurle
- et al.
- 1986
- Journal of Applied Physics
CHARACTERIZATION OF IC DEVICES FABRICATED IN LOW TEMPERATURE (550 degree C) EPITAXY BY UHV/CVD TECHNIQUE.
- T.N. Nguyen
- D.L. Harame
- et al.
- 1985
- IEDM 1985
Influence of thin SiO2 interlayers on chemical reaction and microstructure at the Ni/Si(111) interface
- M. Liehr
- H. Lefakis
- et al.
- 1986
- Physical Review B
Schottky barrier, electronic states and microstructure at Ni silicide-silicon interfaces
- P.S. Ho
- M. Liehr
- et al.
- 1986
- Surface Science
Atomic structure of the epitaxial Al–Si interface
- F. Legoues
- W. Krakow
- et al.
- 1986
- Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Critique of "atom probe field ion microscopy of the decomposition of Cu-2.7 A/O Co"
- F.K. LeGoues
- T.L. McDevitt
- et al.
- 1986
- Scripta Metallurgica
Interdiffusion and precipitation in Al‒Hf thin-film couples
- M. Wittmer
- F. Legoues
- et al.
- 1986
- Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties