Electrical characterization of GaAs/Al0.30Ga0.70 As p+-n heterojunctions grown by metalorganic vapor phase epitaxy
- M.A. Tischler
- H. Baratte
- et al.
- 1989
- Journal of Applied Physics
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15 results for H. Baratte
The influence of growth conditions on the electrical properties of GaAs/Al0.30Ga0.70As p+/n heterojunctions
- M.A. Tischler
- H. Baratte
- et al.
- 1988
- Journal of Crystal Growth
IIA-2 Saturable Charge FET
- P. Solomon
- D.J. Frank
- et al.
- 1987
- IEEE T-ED
Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructures
- H. Baratte
- T.N. Jackson
- et al.
- 1987
- Applied Physics Letters
In situ contacts to GaAs based on InAs
- S.L. Wright
- R.F. Marks
- et al.
- 1986
- Applied Physics Letters