H. Baratte, A.J. Fleischman, et al.
JES
Silicon donors have been implanted through the gate and into the (Al,Ga)As insulator of a GaAs SISFET structure in order to produce a negative shift in the device threshold voltage in selective areas of the wafer. The depletion-mode devices fabricated in this manner have controllable threshold voltage, high transconductance (350 mS/mm at 300 K and 380 mS/mm at 77 K for 1- μ m gate-length devices), and low gate leakage characteristics. Such devices are suitable for enhance-deplete GaAs SISFET logic circuits. Copyright © 1987 by The Institute of Electrical and Electronics Engineers, Inc.
H. Baratte, A.J. Fleischman, et al.
JES
H. Baratte, D.C. La Tulipe, et al.
IEDM 1985
D.C. La Tulipe, A.T.S. Pomerene, et al.
Microelectronic Engineering
Norton D. Lang, Paul M. Solomon
ACS Nano