DX centers in Sn-doped AlxGa1-xAs grown by metalorganic vapor phase epitaxy at T≥850°C
- P.M. Mooney
- B.D. Parker
- et al.
- 1992
- Applied Physics Letters
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11 results for B.D. Parker
Metalorganic vapor phase epitaxy and characterization of boron-doped (Al,Ga)As
- M.A. Tischler
- P.M. Mooney
- et al.
- 1992
- Journal of Applied Physics
Properties of DX centers in AlxGa1-xAs co-doped with boron and silicon
- P.M. Mooney
- M.A. Tischler
- et al.
- 1991
- Applied Physics Letters
Temperature dependence of carrier density in depleted epitaxial layers deposited on semi-insulating substrates
- K. Weiser
- P. Solomon
- et al.
- 1991
- Journal of Applied Physics
Effect of structural parameters on InGaAs/InAlAs 2DEG transport characteristics
- M.A. Tischler
- B.D. Parker
- et al.
- 1991
- Journal of Electronic Materials
Effect of structural parameters on transport characteristics of GaInAs/AlInAs two-dimensional electron gases grown by molecular beam epitaxy
- M.A. Tischler
- B.D. Parker
- 1991
- Applied Physics Letters
Bistability of the DX center in GaAs and AlxGa1-xAs, and experimental tests for negative U of the DX level
- T.N. Theis
- P.M. Mooney
- et al.
- 1991
- Journal of Electronic Materials
Two-dimensional hole gas in Si/Si0.85Ge0.15/Si modulation-doped double heterostructures
- P.J. Wang
- F. Fang
- et al.
- 1989
- Applied Physics Letters
High hole mobility in Si/Si1-xGex/Si p-type modulation-doped double heterostructures
- P.J. Wang
- B.S. Meyerson
- et al.
- 1989
- Applied Physics Letters
Charge trapping in n-AlxGa1-xAs "insulators" and related device instabilities
- T.N. Theis
- B.D. Parker
- 1987
- Applied Surface Science