Threshold power reduction of GaAs-AlGaAs ridge SQW-GRINSCH laser diodes through photon-recycling
- Y. Gigase
- C. Harder
- et al.
- 1990
- ISLC 1990
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68 results for H.P. Meier
Performance of a diode-pumped BaY2F8:Er3+(7.5 at.%) laser at 2.8 μm
- S. Wittwer
- M. Pollnau
- et al.
- 1996
- Optics Communications
Role of molecular beam epitaxy in the field of optoelectronics
- Heinz P. Meier
- M. Kamp
- et al.
- 1994
- Microelectronics Journal
Terracing and step bunching in interfaces of molecular beam epitaxy-grown (Al)GaAs multilayers
- O. Albrektsen
- H.P. Meier
- et al.
- 1993
- Applied Physics Letters
1.3 μm decoupled confinement heterostructure lasers grown by chemical beam epitaxy
- Stefan Hausser
- Christoph S. Harder
- et al.
- 1993
- Applied Physics Letters
Dopant and carrier profiling in modulation-doped GaAs multilayers with cross-sectional scanning tunneling microscopy
- M. Johnson
- H.P. Meier
- et al.
- 1993
- Applied Physics Letters
Atomic-scale view of AlGaAs/GaAs heterostructures with cross-sectional scanning tunneling microscopy
- M. Johnson
- U. Maier
- et al.
- 1993
- Applied Physics Letters
Growth investigations of 1.3 μm GaInAsP/InP MQW laser diodes grown by chemical beam epitaxy
- H.P. Meier
- R.F. Broom
- et al.
- 1993
- Journal of Crystal Growth
Atomic-scale view of AlGaAs/GaAs multilayers with cross-sectional scanning tunneling microscopy
- M. Johnson
- U. Maier
- et al.
- 1993
- Journal of Crystal Growth
Growth studies of (Al,Ga,In)As on InP by molecular beam epitaxy
- J.P. Reithmaier
- S. Hausser
- et al.
- 1993
- Journal of Crystal Growth