Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4 - y, TMG and AsH3
- N.I. Buchan
- T.F. Kuech
- et al.
- 1991
- Journal of Crystal Growth
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73 results for G. Scilla
Novel diffusion phenomenon of dopants in silicon at low temperatures
- M. Wittmer
- P. Fahey
- et al.
- 1991
- Physical Review Letters
Carbon doping of GaP, GalnP, and AlinP in metalorganic molecular beam epitaxy using methyl and ethyl precursors
- T.J. De Lyon
- J. Woodall
- et al.
- 1991
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy
- M.A. Tischler
- R.M. Potemski
- et al.
- 1991
- Journal of Crystal Growth
The mercury pressure dependence of arsenic doping in HgCdTe, grown by organometallic epitaxy (direct alloy growth process)
- N.R. Taskar
- I.B. Bhat
- et al.
- 1991
- Journal of Crystal Growth
Epitaxial-base double-poly self-aligned bipolar transistors
- E. Ganin
- T.C. Chen
- et al.
- 1990
- IEDM 1990
63-75 GHz fT SiGe-base heterojunction bipolar technology
- G.L. Patton
- J.H. Comfort
- et al.
- 1990
- VLSI Technology 1990
SiGe-base PNP transistors fabricated with N-type UHV/CVD LTE in a 'No Dt' process
- D.L. Harame
- J.M.C. Stork
- et al.
- 1990
- VLSI Technology 1990
EPI active devices
- G.L. Patton
- B.S. Meyerson
- et al.
- 1990
- Silicon Materials Science and Technology 1990
Process damage and contamination effects for shallow Si implanted GaAs
- H. Barratte
- G. Scilla
- et al.
- 1989
- ECS Meeting 1989