Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy
- M.A. Tischler
- R.M. Potemski
- et al.
- 1991
- Journal of Crystal Growth
Publications
Date
Featured collections
Popular topics
73 results for G. Scilla
Carbon doping of GaP, GalnP, and AlinP in metalorganic molecular beam epitaxy using methyl and ethyl precursors
- T.J. De Lyon
- J. Woodall
- et al.
- 1991
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
The mercury pressure dependence of arsenic doping in HgCdTe, grown by organometallic epitaxy (direct alloy growth process)
- N.R. Taskar
- I.B. Bhat
- et al.
- 1991
- Journal of Crystal Growth
Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2
- N.I. Buchan
- T.F. Kuech
- et al.
- 1990
- Journal of Electronic Materials
Reaction of titanium with germanium and silicon-germanium alloys
- O. Thomas
- S.L. Delage
- et al.
- 1989
- Applied Physics Letters
Ion beam enhanced diffusion of B during Si molecular beam epitaxy
- P.R. Pukite
- Subramanian S. Iyer
- et al.
- 1989
- Applied Physics Letters
Effects of deuterium plasmas on silicon near-surface properties
- J.L. Lindström
- G.S. Oehrlein
- et al.
- 1989
- Journal of Applied Physics
Experimental evidence of both interstitial- and vacancy-assisted diffusion of Ge in Si
- P. Fahey
- Subramanian S. Iyer
- et al.
- 1989
- Applied Physics Letters
Shallow p+ junction formation by a reverse-type dopant preamorphization scheme
- E. Ganin
- B. Davari
- et al.
- 1989
- Applied Physics Letters
Secondary ion mass spectrometry measurements of deuterium penetration into silicon by low pressure rf glow discharges
- Gottlieb S. Oehrlein
- Gerald J. Scilla
- 1989
- Radiation Effects and Defects in Solids