Reaction of titanium with germanium and silicon-germanium alloys
- O. Thomas
- S.L. Delage
- et al.
- 1989
- Applied Physics Letters
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73 results for G. Scilla
Secondary ion mass spectrometry measurements of deuterium penetration into silicon by low pressure rf glow discharges
- Gottlieb S. Oehrlein
- Gerald J. Scilla
- 1989
- Radiation Effects and Defects in Solids
SiGe-base, poly-emitter heterojunction bipolar transistors
- G.L. Patton
- D.L. Harame
- et al.
- 1989
- VLSI Technology 1989
Fully self-aligned epitaxial-base transistor
- R. Schulz
- M. Jost
- et al.
- 1989
- VLSI Technology 1989
Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy
- T.F. Kuech
- M.A. Tischler
- et al.
- 1989
- Journal of Crystal Growth
Chemistry of hexamethylcyclotrisilazane (HMCTS) silylation
- K.J. Stewart
- J.M. Shaw
- et al.
- 1989
- Symposium on Patterning Science and Technology 1989
Ion-implantation-induced fluorine agglomeration in tungsten disilicide prepared by low-pressure chemical vapour deposition
- C.Sture Petersson
- Harry J. Whitlow
- et al.
- 1989
- Nuclear Inst. and Methods in Physics Research, B
Evolution and chemical state of oxygen upon acid dissolution of YBa2Cu3O6.98
- M.W. Shafer
- R.A. de Groot
- et al.
- 1989
- Materials Research Bulletin
Graded-SiGe-Base, Poly-Emitter Heterojunction Bipolar Transistors
- Gary L. Patton
- David L. Harame
- et al.
- 1989
- IEEE Electron Device Letters
Determination of metal stoichiometry in LaSrCu-oxide, YBaCu-oxide, BiCaSrCu-oxide superconducting films and bulk samples
- M.M. Plechaty
- B.L. Olson
- et al.
- 1989
- Talanta