The diffusion of elements implanted in films of cobalt disilicide
- O. Thomas
- P. Gas
- et al.
- 1988
- Journal of Applied Physics
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73 results for G. Scilla
The influence of hydrocarbons in MOVPE GaAs growth: Improved detection of carbon by secondary ion mass spectroscopy
- T.F. Kuech
- G. Scilla
- et al.
- 1988
- Journal of Crystal Growth
Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
- T.F. Kuech
- M.A. Tischler
- et al.
- 1988
- Applied Physics Letters
Hydrogen plasma induced defects in silicon
- S.-J. Jeng
- G.S. Oehrlein
- et al.
- 1988
- Applied Physics Letters
Diffusion of boron, phosphorus, and arsenic implanted in thin films of cobalt disilicide
- O. Thomas
- P. Gas
- et al.
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Deep levels and minority carrier lifetime in MOVPE p-type GaAs
- P.J. Wang
- T.F. Kuech
- et al.
- 1988
- Journal of Crystal Growth
Formation and Analysis of Shallow Arsenic Profiles
- S. Clayton
- B. Offord
- et al.
- 1988
- Electronics Letters
Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy
- Subramanian S. Iyer
- S.L. Delage
- et al.
- 1988
- Applied Physics Letters
Characterization of the surface oxidation and magnetic properties of MnFe thin films
- S.L. Cohen
- Michael A. Russak
- et al.
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
The control and modeling of doping profiles and transients in MOVPE growth
- T.F. Kuech
- P.J. Wang
- et al.
- 1988
- Journal of Crystal Growth