Himpsel et al. reply [2]
- F.J. Himpsel
- U.O. Karlsson
- et al.
- 1988
- Physical Review Letters
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11 results for D. Rieger
Formation of a new ordered structure of CaF2/Si(111) by ultraviolet irradiation
- U.O. Karlsson
- F.J. Himpsel
- et al.
- 1986
- Physical Review Letters
Determination of interface states for CaF2/Si(111) from near-edge x-ray-absorption measurements
- F.J. Himpsel
- U.O. Karlsson
- et al.
- 1986
- Physical Review Letters
Dielectrics on semiconductors
- F.J. Himpsel
- U.O. Karlsson
- et al.
- 1988
- Materials Science and Engineering B
Oxygen removal from Si via reaction with adsorbed Ge
- J.F. Morar
- B.S. Meyerson
- et al.
- 1987
- Applied Physics Letters
Sb/GaAs(110) interface: A reevaluation
- F. Schäffler
- R. Ludeke
- et al.
- 1987
- Physical Review B
Summary abstract: Metal-induced impurity states at the inP/transition-metal interface
- F. Schaffler
- W. Drube
- et al.
- 1987
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Electronic structure of the CaF2/Si(111) interface
- D. Rieger
- F.J. Himpsel
- et al.
- 1986
- Physical Review B
Enhancement of Si oxidation by cerium overlayers and formation of cerium silicate
- F.U. Hillebrecht
- Maria Ronay
- et al.
- 1986
- Physical Review B
Surface oxidation states of germanium
- D. Schmeisser
- R.D. Schnell
- et al.
- 1986
- Surface Science