Temperature sensitivity of devices and circuits fabricated in fully depleted accumulation mode CMOS/SOI
- F.T. Brady
- N. Haddad
- et al.
- 1992
- IEEE International SOI Conference 1992
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35 results for L.K. Wang
Hot-carrier reliability of fully depleted accumulation mode SOI MOSFETS
- A. Acovic
- L.K. Wang
- et al.
- 1992
- IEEE International SOI Conference 1992
Effect of total dose radiation on device self latch-up
- F.T. Brady
- N. Haddad
- et al.
- 1992
- IEEE International SOI Conference 1992
Effect of hydrogen annealing on hot-carrier instability of X-Ray irradiated CMOS devices
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1992
- Journal of Electronic Materials
X-ray lithography induced radiation damage in CMOS and bipolar devices
- L.K. Wang
- 1992
- Journal of Electronic Materials
Enhanced performance of accumulation mode 0.5 μ m CMOS/SOI operated at 300 K and 85 K
- L.K. Wang
- J. Seliskar
- et al.
- 1991
- IEDM 1991
A 0.5 μm fully scaled two-level metal fully planarized interconnect structure fabricated with X-ray lithography
- D. Moy
- L.K. Wang
- et al.
- 1990
- VLSI Technology 1990
Radiation damage and its effect on hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron x-ray lithography
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1990
- Journal of Electronic Materials
Characteristics of CMOS devices fabricated using high quality thin PECVD gate oxide
- L.K. Wang
- D.S. Wen
- et al.
- 1989
- IEDM 1989
0.5 μm CMOS devices and circuits fabricated using synchrotron X-ray lithography
- L.K. Wang
- C.H. Hsu
- et al.
- 1989
- VLSI Technology 1989