Epitaxial-base double-poly self-aligned bipolar transistors
- E. Ganin
- T.C. Chen
- et al.
- 1990
- IEDM 1990
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31 results for Gary L. Patton
SiGe-base heterojunction bipolar transistors: Physics and design issues
- G.L. Patton
- J.M.C. Stork
- et al.
- 1990
- IEDM 1990
Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology
- J.H. Comfort
- G.L. Patton
- et al.
- 1990
- IEDM 1990
Sub-30ps ECL circuits using high-fT Si and SiGe epitaxial base SEEW transistors
- J.N. Burghartz
- J.H. Comfort
- et al.
- 1990
- IEDM 1990
Low temperature operation of Si and SiGe bipolar transistors
- E.F. Crabbe
- G.L. Patton
- et al.
- 1990
- IEDM 1990
High performance Si and SiGe-base pnp transistors
- D.L. Harame
- J.M.C. Stork
- et al.
- 1988
- IEDM 1988
Current Gain Rolloff in Graded-Base SiGe Heterojunction Bipolar Transistors
- Emmanuel F. Crabbé
- John D. Cressler
- et al.
- 1993
- IEEE Electron Device Letters
Sub-30-ps ECL Circuit Operation at Liquid-Nitrogen Temperature Using Self-Aligned Epitaxial SiGe-Base Bipolar Transistors
- John D. Cressler
- James H. Comfort
- et al.
- 1991
- IEEE Electron Device Letters
Self-Aligned SiGe-Base Heterojunction Bipolar Transistor by Selective Epitaxy Emitter Window (SEEW) Technology
- Joachim N. Burghartz
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
75-GHz fT SiGe-Base Heterojunction Bipolar Transistors
- Gary L. Patton
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters