New preamorphization technique for very shallow p+-n junctions
- B. Davari
- E. Ganin
- et al.
- 1989
- VLSI Technology 1989
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20 results for E. Ganin
SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- VLSI Technology 1989
Design issues for SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- Bipolar Circuits and Technology Meeting 1989
SiGe-base, poly-emitter heterojunction bipolar transistors
- G.L. Patton
- D.L. Harame
- et al.
- 1989
- VLSI Technology 1989
Graded-SiGe-Base, Poly-Emitter Heterojunction Bipolar Transistors
- Gary L. Patton
- David L. Harame
- et al.
- 1989
- IEEE Electron Device Letters
High performance Si and SiGe-base pnp transistors
- D.L. Harame
- J.M.C. Stork
- et al.
- 1988
- IEDM 1988
High Transconductance and Velocity Overshoot in NMOS Devices at the 0.1-μm Gate-Length Level
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1988
- IEEE Electron Device Letters
Inverter Performance Of Deep-Submicrometer Mosfet'S
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1988
- IEEE Electron Device Letters
EXPERIMENTAL TECHNOLOGY AND CHARACTERIZATION OF SELF-ALIGNED 0. 1 mu M-GATE-LENGTH LOW-TEMPERATURE OPERATION NMOS DEVICES.
- G.A. Sai-Halasz
- M.R. Wordeman
- et al.
- 1986
- IEDM 1986
Design and Experimental Technology for 0.1-μm Gate-Length Low-Temperature Operation FET's
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1987
- IEEE Electron Device Letters