A high performance 0.15 μm CMOS
- G. Shahidi
- J. Warnock
- et al.
- 1993
- VLSI Technology 1993
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20 results for E. Ganin
EPI active devices
- G.L. Patton
- B.S. Meyerson
- et al.
- 1990
- Silicon Materials Science and Technology 1990
Design issues for SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- Bipolar Circuits and Technology Meeting 1989
SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- VLSI Technology 1989
New preamorphization technique for very shallow p+-n junctions
- B. Davari
- E. Ganin
- et al.
- 1989
- VLSI Technology 1989
SiGe-base, poly-emitter heterojunction bipolar transistors
- G.L. Patton
- D.L. Harame
- et al.
- 1989
- VLSI Technology 1989
low Temperature Silicon Epitaxy by Hot Wall Ultrahigh Vacuum/Low Pressure Chemical Vapor Deposition Techniques: Surface Optimization
- B.S. Meyerson
- E. Ganin
- et al.
- 2019
- JES
Submicrometer Si and Si-Ge Epitaxial-Bas Double-Poly Self-Aligned Bipolar Transistors
- T.C. Chen
- E. Ganin
- et al.
- 1991
- IEEE T-ED
As+ and Ga+ implantation and the formation of buried GaAs layers in silicon
- Peter Madakson
- Eti Ganin
- et al.
- 1990
- Journal of Applied Physics
Shallow p+ junction formation by a reverse-type dopant preamorphization scheme
- E. Ganin
- B. Davari
- et al.
- 1989
- Applied Physics Letters