Characteristics of CMOS devices fabricated using high quality thin PECVD gate oxide
- L.K. Wang
- D.S. Wen
- et al.
- 1989
- IEDM 1989
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36 results for T.N. Nguyen
Plasma-enhanced CVD of high quality insulating films
- J. Batey
- E. Tierney
- et al.
- 1989
- Applied Surface Science
Epitaxial base transistors with ultrahigh vacuum chemical vapor deposition (uhv/cvd) epitaxy: Enhanced profile control for greater flexibility in device design
- David L. Harame
- Johannes M.C. Stork
- et al.
- 1989
- IEEE Electron Device Letters
Base Profile Design for High-Performance Operation of Bipolar Transistors at Liquid-Nitrogen Temperature
- Johannes M. C. Stork
- David L. Harame
- et al.
- 1989
- IEEE T-ED
Oxide-Thickness Determination in Thin-Insulator MOS Structures
- Bruno Ricco
- Piero Olivo
- et al.
- 1988
- IEEE T-ED
High-Field-Induced Degradation in Ultra-Thin SiO2 Films
- Piero Olivo
- Thao N. Nguyen
- et al.
- 1988
- IEEE T-ED
Nonequilibrium boron doping effects in low-temperature epitaxial silicon films
- B.S. Meyerson
- F. Legoues
- et al.
- 1987
- Applied Physics Letters
Excimer laser-induced deposition of silicon nitride thin films
- J.M. Jasinski
- B.S. Meyerson
- et al.
- 1987
- Journal of Applied Physics
POST OXIDATION ANNEAL AND RE-OXIDATION EFFECTS IN 5 nm SiO//2 FILMS.
- L. Dori
- M. Arienzo
- et al.
- 1986
- MRS Fall Meeting 1986
The relation between positive charge and breakdown in metal-oxide-silicon structures
- Z.A. Weinberg
- T.N. Nguyen
- 1987
- Journal of Applied Physics