Correlation of deep-level and chemically-active-site densities at vicinal GaAs(100)-Al interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Physical Review B
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19 results for L.J. Brillson
Increased range of Fermi-level stabilization energy at metal/melt-grown GaAs(100) interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Correlation of interface chemistry, barrier height, and step density for Al on vicinal GaAs(100) surfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Metal/(100) GaAs interface: Case for a metal-insulator-semiconductor-like structure
- J. Freeouf
- J. Woodall
- et al.
- 1990
- Applied Physics Letters
Confirmation of the temperature-dependent photovoltaic effect on Fermi-level measurements by photoemission spectroscopy
- S. Chang
- I.M. Vitomirov
- et al.
- 1990
- Physical Review B
interface states and Schottky barrier formation at metal/GaAs junctions
- R.E. Viturrc
- C. Mailhiot
- et al.
- 1989
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Band bending and interface states for metals on GaAs
- R.E. Viturro
- J.L. Shaw
- et al.
- 1988
- Applied Physics Letters
Semiconductor interfaces
- G. Margaritondo
- L.J. Brillson
- et al.
- 1986
- Materials Science and Engineering
Absence of Fermi level pinning at metal-InxGa1-xAs(100) interfaces
- L.J. Brillson
- M.L. Slade
- et al.
- 1986
- Applied Physics Letters