22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
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14 results for D.C. Latulipe
Advanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakage
- E. Gusev
- C. Cabral Jr.
- et al.
- 2004
- IEDM 2004
Charge trapping in aggressively scaled metal gate/high-κ stacks
- E. Gusev
- V. Narayanan
- et al.
- 2004
- IEDM 2004
A 90nm dual damascene hybrid (organic / inorganic) low-k - Copper BEOL integration scheme
- T. Dalton
- A. Cowley
- et al.
- 2003
- ADMETA 2003
Effects of underlayer on performance of bilayer resists for 248-nm lithography
- Katherina Babich
- Alessandro Callegari
- et al.
- 1998
- Microlithography 1998
Comparison of liquid- And vapor-phase silylation processes for 193-nm positive-tone lithography
- Mark A. Hartney
- Roderick R. Kunz
- et al.
- 1993
- Microlithography 1993
S-parameter characterization of GaAs gate SISFETs at liquid nitrogen temperatures
- Y. Kwark
- P. Solomon
- et al.
- 1989
- IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits 1989
Overlay as the key to drive wafer scale 3D integration
- Steven E. Steen
- Douglas LaTulipe
- et al.
- 2007
- Microelectronic Engineering
Fabrication of x-ray lithography masks with optical lithography
- D. LaTulipe
- J.R. Maldonado
- et al.
- 1996
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Improved Schottky gate characteristics for MOVPE-grown GaAs MESFETs
- M.A. Tischler
- D.C. Latulipe
- et al.
- 1992
- Journal of Crystal Growth