Analysis of a single-electron decimal adder
- Hossam Fahmy
- K. Ismail
- 1997
- Applied Physics Letters
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67 results for K. Ismail
Negative differential conductance in lateral double-barrier transistors fabricated in strained Si quantum wells
- S.J. Koester
- K. Ismail
- et al.
- 1997
- Applied Physics Letters
Low-field magnetoresistance in Si/SiGe quantum wells
- A. Prinz
- G. Brunthaler
- et al.
- 1997
- Thin Solid Films
Si/SiGe CMOS: Can it extend the lifetime of Si?
- K. Ismail
- 1997
- ISSCC 1997
An MOS transistor with Schottky source/drain contacts and a self-aligned low-resistance T-gate
- S. Rishton
- K. Ismail
- et al.
- 1997
- Microelectronic Engineering
Electrical characterization of Si/Si0.7Ge0.3 quantum well wires fabricated by low damage CF4 reactive ion etching
- K.Y. Lee
- S.J. Koester
- et al.
- 1997
- Microelectronic Engineering
CMOS scaling into the nanometer regime
- Yuan Taur
- Douglas A. Buchanan
- et al.
- 1997
- Proceedings of the IEEE
New complimentary metal-oxide semiconductor technology with self-aligned Schottky source/drain and low-resistance T gates
- S. Rishton
- K. Ismail
- et al.
- 1997
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications
- I. Adesida
- M. Arafa
- et al.
- 1997
- Microelectronic Engineering
Design of Si/SiGe heterojunction complementary metal-oxide-semiconductor transistors
- A. Sadek
- K. Ismail
- et al.
- 1996
- IEEE Transactions on Electron Devices