Novel Properties of a 0.1-μm-Long Split-Gate MODFET
- K. Ismail
- K.Y. Lee
- et al.
- 1990
- IEEE Electron Device Letters
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67 results for K. Ismail
1.1 GHz MSM photodiodes on relaxed Si1-xGex grown by UHV-CVD
- S.J. Koester
- B.-U. Klepser
- et al.
- 1998
- DRC 1998
Novel three-terminal negative differential conductance device in silicon: The hot-electron phonon-emission field-effect transistor
- S.J. Koester
- K. Ismail
- et al.
- 1997
- DRC 1997
Ballistic conductance steps and electron focusing in long samples
- S. Washburn
- K. Ismail
- et al.
- 1992
- Quantum Effect Physics, Electronics and Applications 1992
Quantum-ballistic transport in an etch-defined Si/SiGe quantum point contact
- U. Wieser
- U. Kunze
- et al.
- 2002
- Applied Physics Letters
Fabrication of Si/SiGe quantum point contacts by electron-beam lithography and shallow wet-chemical etching
- U. Wieser
- U. Kunze
- et al.
- 2002
- Physica E: Low-Dimensional Systems and Nanostructures
Interface morphology in strained layer epitaxy of Si/Si1-xGex layers studied by x-ray scattering under grazing incidence and atomic force microscopy
- Z. Kovats
- T. Salditt
- et al.
- 1999
- Journal of Physics D: Applied Physics
Determination of spin- and valley-split energy levels in strained Si quantum wells
- S.J. Koester
- K. Ismail
- et al.
- 1999
- Semiconductor Science and Technology
Negative differential conductance in strained Si point contacts and wires
- S.J. Koester
- K. Ismail
- et al.
- 1997
- Applied Physics Letters
Analysis of a single-electron decimal adder
- Hossam Fahmy
- K. Ismail
- 1997
- Applied Physics Letters