Design of Si/SiGe heterojunction complementary metal-oxide-semiconductor transistors
- A. Sadek
- K. Ismail
- et al.
- 1996
- IEEE Transactions on Electron Devices
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67 results for K. Ismail
Weak localization in back-gated S quantum-well wires fabricated by reactive ion etching
- S.J. Koester
- K. Ismail
- et al.
- 1996
- Physical Review B - CMMP
DC and RF performance of 0.25 μm p-type SiGe MODFET
- M. Arafa
- P. Fay
- et al.
- 1996
- IEEE Electron Device Letters
Low temperature magnetotransport of 2D electron and hole systems in high-mobility Si-Si1-xGex heterostructures
- R.B. Dunford
- R. Newbury
- et al.
- 1996
- Surface Science
High speed p-type SiGe modulation-doped field-effect transistors
- M. Arafa
- P. Fay
- et al.
- 1996
- IEEE Electron Device Letters
Electron transport in the quantum hall regime in strained si/sige
- K. Ismail
- 1996
- Physica B: Condensed Matter
Low-temperature transport and photoconductivity response of high mobility Si-SiGe heterostructures in strong magnetic fields
- R.G. Clark
- R.B. Dunford
- et al.
- 1996
- Physica B: Condensed Matter
Si/SiGe quantum wells: fundamentals to technology
- K. Ismail
- B.S. Meyerson
- 1995
- Journal of Materials Science: Materials in Electronics
Roughness analysis of Si/SiGe heterostructures
- R.M. Feenstra
- M.A. Lutz
- et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
High-transconductance p-type SiGe modulation-doped field-effect transistor
- M. Arafa
- P. Fay
- et al.
- 1995
- Electronics Letters