Factors affecting reactive ion etching of corning 7059 glassYue KuoJ.R. Crowe1989Proceedings of SPIE 1989
Reactive ion etching of a multicomponent glass substrateYue KuoJ.R. Crowe1989Proceedings of SPIE 1989
Reactive Ion Etching of PECVD Amorphous Silicon and Silicon Nitride Thin Films with Fluorocarbon GasesYue Kuo2019JES
Reactive Ion Etching of PECVD n+ a-Si:H: Plasma Damage to PECVD Silicon Nitride Film and Application to Thin Film Transistor PreparationM.S. Crowder2019JES
Reactive Ion Etching of Sputter Deposited Tantalum Oxide and its Etch Selectivity to TantalumYue Kuo2019JES
Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistors - A critical reviewYue Kuo1998Vacuum
Reactive ion etching of indium tin oxide by SiCl4-based plasmas - Substrate temperature effectYue Kuo1998Vacuum