GaAs sees the light
- J. Woodall
- Alan C. Warren
- et al.
- 1991
- IEEE T-ED
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34 results for M.R. Melloch
1.3-μm P-I-N Photodetector using GaAs with As Precipitates (Gaas:As)
- Alan C. Warren
- J.H. Burroughes
- et al.
- 1991
- IEEE Electron Device Letters
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
- M.R. Melloch
- N. Otsuka
- et al.
- 1990
- Applied Physics Letters
Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy
- Alan C. Warren
- J. Woodall
- et al.
- 1990
- Applied Physics Letters