Conference paper
Degradation of GaAs and Ga1-xAlxAs light emitting diodes
J.M. Blum, K. Konnerth, et al.
IRPS 1970
Summary form only given. Reported are p-i-n photodetectors using GaAs with As precipitates (GaAs) that detect 1.3-μm light with reasonable efficiency. Since high-performance GaAs electronic circuits can be epitaxially grown on GaAs, this work may open the way for an all-GaAs 1.3-μm optical receiver chip. In the GaAs p-i-n devices, the i layer was a 1-μm-thick layer of GaAs. MSM structures with GaAs as the optically active material were also made.
J.M. Blum, K. Konnerth, et al.
IRPS 1970
S. Tiwari, G.D. Pettit, et al.
IEDM 1992
S.D. Offsey, J. Woodall, et al.
Applied Physics Letters
M.R. Melloch, K. Mahalingam, et al.
Journal of Crystal Growth