Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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8 results for Peter M. Asbeck

InP/InGaAs Heterojunction Bipolar Transistors Grown by Gas-Source Molecular Beam Epitaxy with Carbon-Doped Base
- - Russell C. Gee
  - Tsung-Pei Chin
  - et al.
- 1992
- IEEE Electron Device Letters
Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source
- - M.V. Fischetti
  - S. Jin
  - et al.
- 2009
- IWCE 2009
Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model
- - M.V. Fischetti
  - S. Jin
  - et al.
- 2009
- Journal of Computational Electronics
Static frequency divider circuit using 0.15 μm gate length Si_0.2Ge_0.8/Si_0.7Ge_0.3 p-MODFETs
- - D. Singh
  - S.J. Koester
  - et al.
- 2003
- Electronics Letters
A theory of high-frequency distortion in bipolar transistors
- - Mani Vaidyanathan
  - Masaya Iwamoto
  - et al.
- 2003
- IEEE T-MTT
A 26.5 GHz Silicon MOSFET 2:1 Dynamic Frequency Divider
- - Matt Wetzel
  - Leathen Shi
  - et al.
- 2000
- IEEE Microwave and Guided Wave Letters
InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions
- - R.C. Gee
  - C.L. Lin
  - et al.
- 1993
- Electronics Letters
Photoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure
- - D. Yan
  - Fred H. Pollak
  - et al.
- 1992
- Applied Physics Letters