P.M. Mooney, L. Tilly, et al.
Journal of Applied Physics
The demonstration of an integrated circuit was performed by using high mobility p-channel modulation doped field effect transistors (MODFET). The circuit was based on source-coupled FET logic and also included level-shifted source followers to match the output voltages with respect to the input voltages required by the devices. It was found that the circuits operated up to a maximum clock frequency of 2.9 GHz.
P.M. Mooney, L. Tilly, et al.
Journal of Applied Physics
I. Lagnado, P.R. De La Houssaye, et al.
SiRF 2000
E.F. Crabbé, B. Mcyerson, et al.
Device Research Conference 1993
H. Shang, J.O. Chu, et al.
VLSI Technology 2004