Potential imaging of Si/HfO2/polycrystalline silicon gate stacks: Evidence for an oxide dipole
- R. Ludeke
- V. Narayanan
- et al.
- 2005
- Applied Physics Letters
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76 results for E. Gusev
Threshold voltage instabilities in high-κ gate dielectric stacks
- Sufi Zafar
- Arvind Kumar
- et al.
- 2005
- IEEE T-DMR
Interfacial oxide formation from intrinsic oxygen in W-HfO2 gated silicon field-effect transistors
- E.J. Preisler
- S. Guha
- et al.
- 2004
- Applied Physics Letters
Evaluation of thermal stability for CMOS gate metal materials
- C. Cabral Jr.
- C. Lavoie
- et al.
- 2004
- JES
Charge trapping and annealing in high-k gate dielectrics
- James A. Felix
- Marty R. Shaneyfelt
- et al.
- 2004
- IEEE TNS
Structural and surface potential characterization of annealed HfO 2 and (HfO 2) x(SiO 2) 1-x films
- R. Ludeke
- E. Gusev
- 2004
- Journal of Applied Physics
Negative bias-temperature instabilities in metal-oxide-silicon devices with SiO 2 and SiO xN y/HfO 2 gate dielectrics
- X.J. Zhou
- L. Tsetseris
- et al.
- 2004
- Applied Physics Letters
Effects of radiation and charge trapping on the reliability of high- κ gate dielectrics
- J.A. Felix
- J.R. Schwank
- et al.
- 2004
- Microelectronics Reliability
Transport and exchange of hydrogen isotopes in silicon-device-related stacks
- C. Krug
- E. Gusev
- et al.
- 2004
- Journal of Applied Physics
Charge trapping studies on ultrathin ZrO 2 and HfO 2 high-k dielectrics grown by room temperature ultraviolet ozone oxidation
- Shriram Ramanathan
- Paul C. McIntyre
- et al.
- 2004
- Applied Physics Letters