Physical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structures

The physical and electrical properties of thin layers of AlN were studied in Al-gated MOS capacitors and long channel MOSFETs. It was found that devices with close to ideal hf C-V characteristics can be achieved with growth and anneal temperatures at 650°C. The results showed that the leakage current of the AlN was up to five orders of magnitude lower than for SiO2 of equivalent thickness.