M. Copel, J. Falta
Physical Review B
The physical and electrical properties of thin layers of AlN were studied in Al-gated MOS capacitors and long channel MOSFETs. It was found that devices with close to ideal hf C-V characteristics can be achieved with growth and anneal temperatures at 650°C. The results showed that the leakage current of the AlN was up to five orders of magnitude lower than for SiO2 of equivalent thickness.
M. Copel, J. Falta
Physical Review B
H. Kim, C. Lavoie, et al.
Journal of Applied Physics
D.J. Kim, D.Y. Ryu, et al.
Journal of Applied Physics
L.Å. Ragnarsson, N.A. Bojarczuk, et al.
IEEE Electron Device Letters