Time dependent dielectric breakdown in a low-k interlevel dielectric
- J.R. Lloyd
- E. Liniger
- et al.
- 2004
- Microelectronics Reliability
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28 results for J.R. Lloyd
Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
- R. Filippi
- J.F. McGrath
- et al.
- 2004
- IRPS 2004
Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
- R. Filippi
- J.F. McGrath
- et al.
- 2004
- IRPS 2004
Effects of failure criteria on the lifetime distribution of dual-damascene Cu line/via on W
- R.F. Liu
- C.-K. Hu
- et al.
- 2004
- Journal of Applied Physics
Characterization of Interconnect Defects due to Electromigration using Scanning Thermal Microscopy
- E.X.W. Wu
- X.H. Zheng
- et al.
- 2003
- ISTFA 2003
Electromigration induced resistance decrease in Sn conductors
- J.R. Lloyd
- 2003
- Journal of Applied Physics
Relationship between interfacial adhesion and electromigration in Cu metallization
- M.W. Lane
- E. Liniger
- et al.
- 2003
- Journal of Applied Physics
Relationship between interfacial adhesion and electromigration in Cu metallization
- J.R. Lloyd
- M.W. Lane
- et al.
- 2002
- IIRW 2002