NanoStack Transistor Architecture for CMOS 7A Node and BeyondS. RebohC. Zhanget al.2025VLSI Technology and Circuits 2025
Imaging, Modeling and Engineering of Strain in Gate-All-Around Nanosheet TransitorsS. RebohV. Boureauet al.2019IEDM 2019
Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technologyS. RebohR. Coquandet al.2018Applied Physics Letters