Imaging, Modeling and Engineering of Strain in Gate-All-Around Nanosheet Transitors
- S. Reboh
- V. Boureau
- et al.
- 2019
- IEDM 2019
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4 results for N. Bernier
Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology
- S. Reboh
- R. Coquand
- et al.
- 2018
- Applied Physics Letters
High-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffraction
- David Cooper
- N. Bernier
- et al.
- 2017
- Applied Physics Letters
Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography
- Yun-Yu Wang
- David Cooper
- et al.
- 2015
- Applied Physics Letters