Impact of La2O3 thickness on HfO2/La 2O3/Ge capacitors and p-channel MOSFETs
- Caroline Andersson
- Marilyne Sousa
- et al.
- 2009
- ESSDERC 2009
Publications
7 results for Yerassimos Panayiotatos
Lanthanum germanate as dielectric for scaled Germanium metal-oxide-semiconductor devices
- C. Andersson
- C. Rossel
- et al.
- 2009
- Microelectronic Engineering
Very high- κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates
- G. Mavrou
- P. Tsipas
- et al.
- 2008
- Applied Physics Letters
Gate dielectrics for high mobility semiconductors
- A. Dimoulas
- Y. Panayiotatos
- et al.
- 2008
- ECS Meeting 2008
Germanium-induced stabilization of a very high- k zirconia phase in ZrO2 / GeO2 gate stacks
- P. Tsipas
- S.N. Volkos
- et al.
- 2008
- Applied Physics Letters
Epitaxial germanium-on-insulator grown on (001) Si
- J.W. Seo
- Ch. Dieker
- et al.
- 2007
- Microelectronic Engineering
Current challenges in Ge MOS technology
- A. Dimoulas
- M. Houssa
- et al.
- 2006
- ECS Meeting 2006