S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
We have grown for the first time (001)-oriented Germanium on (001) Si by using a perovskite oxide as an insulating epitaxial template. The full structures were grown by molecular beam epitaxy. We could successfully demonstrate a fully epitaxial approach to integrate a Germanium-on-insulator (GOI) structure on Si wafers. © 2007 Elsevier B.V. All rights reserved.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Julien Autebert, Aditya Kashyap, et al.
Langmuir
E. Burstein
Ferroelectrics
K.N. Tu
Materials Science and Engineering: A