L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
We have grown for the first time (001)-oriented Germanium on (001) Si by using a perovskite oxide as an insulating epitaxial template. The full structures were grown by molecular beam epitaxy. We could successfully demonstrate a fully epitaxial approach to integrate a Germanium-on-insulator (GOI) structure on Si wafers. © 2007 Elsevier B.V. All rights reserved.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
K.N. Tu
Materials Science and Engineering: A
A. Krol, C.J. Sher, et al.
Surface Science