David B. Mitzi
Journal of Materials Chemistry
We have grown for the first time (001)-oriented Germanium on (001) Si by using a perovskite oxide as an insulating epitaxial template. The full structures were grown by molecular beam epitaxy. We could successfully demonstrate a fully epitaxial approach to integrate a Germanium-on-insulator (GOI) structure on Si wafers. © 2007 Elsevier B.V. All rights reserved.
David B. Mitzi
Journal of Materials Chemistry
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Michiel Sprik
Journal of Physics Condensed Matter
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997