Gate dielectrics for high mobility semiconductors

Abstract

In this paper we investigate the impact of charged surface defects on the electronic properties of Ge surface. In addition, we describe new ways of passivating the Ge surface by using reactive rare earth oxides, which catalyze the formation of stable germanates. Their chemical and thermal stability are thought to be responsible for the good electrical properties including very low Dit. In the case of GaAs surface passivation, we show that by optimally adjusting the amorphous Si spacer layer, it is possible to avoid oxidation of GaAs and achieve surface channel inversion. © The Electrochemical Society.