Effect of collector lateral scaling on performance of high-speed SiGe HBTs with fT>300GHz
- J.-S. Rieh
- M. Khater
- et al.
- 2006
- Electronics Letters
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36 results for David C. Ahlgren
SiGe HBT without Selectively Implanted Collector (SIC) exhibiting f max = 310 GHz and BVCEo = 2 v
- Jae-Sung Rieh
- Marwan Khater
- et al.
- 2006
- IEEE Transactions on Electron Devices
SiGe HBT BiCMOS technology for millimeter-wave applications
- Alvin Joseph
- Mattias Dahlstrom
- et al.
- 2005
- ISCS 2005
Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances
- Jae-Sung Rieh
- David Greenberg
- et al.
- 2005
- IEEE Transactions on Electron Devices
Status and direction of communication technologies - SiGe BiCMOS and RFCMOS
- Alvin J. Joseph
- David L. Harame
- et al.
- 2005
- Proceedings of the IEEE
SiGe HBT technology with f max/f T = 350/300 GHz and gate delay below 3.3 ps
- M. Khater
- J.-S. Rieh
- et al.
- 2004
- IEDM 2004
SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications
- Jae-Sung Rieh
- Basanth Jagannathan
- et al.
- 2004
- IEEE T-MTT
SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz
- J.-S. Rieh
- D.R. Greenberg
- et al.
- 2004
- RFIC 2004
High performance thick copper inductors in an RF technology
- Kunal Vaed
- William Graham
- et al.
- 2004
- SPIE Micromachining and Microfabrication 2004
Low-noise performance near BVCEO in a 200 GHz SiGe technology at different collector design points
- D.R. Greenberg
- S. Sweeney
- et al.
- 2003
- IMS 2003