HBT low-noise performance in a 0.18 μm SiGe BiCMOS technology
- D.R. Greenberg
- D. Ahlgren
- et al.
- 2000
- RFIC 2000
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36 results for David C. Ahlgren
A Si-Ge HBT technology for the wireless marketplace
- D. Ahlgren
- D.A. Sunderland
- et al.
- 1996
- ESSDERC 1996
On the performance limits of cryogenically operated SiGe HBTs and its relation to scaling for terahertz speeds
- Jiahui Yuan
- John D. Cressler
- et al.
- 2009
- IEEE Transactions on Electron Devices
Gate-induced-drain-leakage current in 45-nm CMOS technology
- Xiaohin Yuan
- Jae-Eun Park
- et al.
- 2008
- IEEE T-DMR
Effect of collector lateral scaling on performance of high-speed SiGe HBTs with fT>300GHz
- J.-S. Rieh
- M. Khater
- et al.
- 2006
- Electronics Letters
SiGe HBT without Selectively Implanted Collector (SIC) exhibiting f max = 310 GHz and BVCEo = 2 v
- Jae-Sung Rieh
- Marwan Khater
- et al.
- 2006
- IEEE Transactions on Electron Devices
Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances
- Jae-Sung Rieh
- David Greenberg
- et al.
- 2005
- IEEE Transactions on Electron Devices
Status and direction of communication technologies - SiGe BiCMOS and RFCMOS
- Alvin J. Joseph
- David L. Harame
- et al.
- 2005
- Proceedings of the IEEE
SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications
- Jae-Sung Rieh
- Basanth Jagannathan
- et al.
- 2004
- IEEE T-MTT
Foundation of rf CMOS and SiGe BiCMOS technologies
- James S. Dunn
- David C. Ahlgren
- et al.
- 2003
- IBM J. Res. Dev