3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay
- Basanth Jagannathan
- Mounir Meghelli
- et al.
- 2003
- IEEE Electron Device Letters
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36 results for David C. Ahlgren
Noise performance scaling in high-speed silicon RF technologies
- D.R. Greenberg
- S. Sweeney
- et al.
- 2003
- SiRF 2003
Sige HBT performance and reliability trends through fT of 350GHz
- Greg Freeman
- Jae-Sung Rieh
- et al.
- 2003
- IRPS 2003
Foundation of rf CMOS and SiGe BiCMOS technologies
- James S. Dunn
- David C. Ahlgren
- et al.
- 2003
- IBM J. Res. Dev
Noise performance of a low base resistance 200 GHz SiGe technology
- D.R. Greenberg
- B. Jagannathan
- et al.
- 2002
- IEDM 2002
A 4.2-ps ECL ring-oscillator in a 285-GHz f MAX SiGe technology
- Basanth Jagannathan
- Mounir Meghelli
- et al.
- 2002
- IEEE Electron Device Letters
Self-aligned SiGe NPN transistors with 285 GHz f MAX and 207 GHz f T in a manufacturable technology
- B. Jagannathan
- M. Khater
- et al.
- 2002
- IEEE Electron Device Letters
50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs
- Seshadri Subbanna
- Gregory Freeman
- et al.
- 2002
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICS
- S. Subbanna
- L. Larson
- et al.
- 2001
- Proceedings of the Custom Integrated Circuits Conference
Noise performance and considerations for integrated RF/analog/mixed-signal design in a high-performance SiGe BiCMOS technology
- D.R. Greenberg
- S. Sweeney
- et al.
- 2001
- Technical Digest - International Electron Devices Meeting