Direct silicon bonded (DSB) substrate solid phase epitaxy (SPE) integration scheme study for high performance bulk CMOSHaizhou YinC.Y. Sunget al.2006IEDM 2006
Interaction of middle-of-line (MOL) temperature and mechanical stress on 90nm hi-speed device performance and reliabilityK.Y. LimV. Chanet al.2005ESSDERC 2005
Design of high performance PFETs with strained Si channel and laser annealZ. LuoY.F. Chonget al.2005IEDM 2005
High performance CMOS bulk technology using direct silicon bond (DSB) mixed crystal orientation substratesChun-Yung SungHaizhou Yinet al.2005IEDM 2005
High performance and low power transistors integrated in 65nm bulk CMOS technologyZ. LuoA. Steegenet al.2004IEDM 2004
Thermally robust dual-work function ALD-MN x MOSFETs using conventional CMOS process flowD.-G. ParkZ. Luoet al.2004VLSI Technology 2004
Thermally stable ultra-thin Zr silicate for CMOS applicationsZ. LuoT.P. Maet al.2001International Symposium on VLSI Technology, Systems, and Applications, Proceedings