Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
The electrical and physical properties of ultra-thin zirconium silicate films deposited by the jet-vapor-deposition (JVD) process were reported. The fabrication of the films with equivalent oxide thickness of 1 nm with high thermal stability, low leakage and good electrical properties was shown. It was shown that zirconium silicate films can survive an annealing temperature as high as 1000°C.
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters