J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
The electrical and physical properties of ultra-thin zirconium silicate films deposited by the jet-vapor-deposition (JVD) process were reported. The fabrication of the films with equivalent oxide thickness of 1 nm with high thermal stability, low leakage and good electrical properties was shown. It was shown that zirconium silicate films can survive an annealing temperature as high as 1000°C.
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A. Gangulee, F.M. D'Heurle
Thin Solid Films
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP