Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
The electrical and physical properties of ultra-thin zirconium silicate films deposited by the jet-vapor-deposition (JVD) process were reported. The fabrication of the films with equivalent oxide thickness of 1 nm with high thermal stability, low leakage and good electrical properties was shown. It was shown that zirconium silicate films can survive an annealing temperature as high as 1000°C.
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
E. Burstein
Ferroelectrics
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007