Novel enhanced stressor with graded embedded SiGe source/drain for high performance CMOS devicesJ.-P. HanH. Utomoet al.2006IEDM 2006
Stress proximity technique for performance improvement with dual stress liner at 45nm technology and beyondX. ChenS. Fanget al.2006VLSI Technology 2006
A 45nm low cost low power platform by using integrated dual-stress-liner technologyJ. YuanS.S. Tanet al.2006VLSI Technology 2006
Design of high performance PFETs with strained Si channel and laser annealZ. LuoY.F. Chonget al.2005IEDM 2005
Advanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakageE. GusevC. Cabral Jr.et al.2004IEDM 2004
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidationJakub KedzierskiEdward Nowaket al.2002IEDM 2002
A method for measuring barrier heights, metal work functions and fixed charge densities in metal/SiO2/Si capacitorsSufi ZafarCyril Cabral Jr.et al.2002Applied Physics Letters