Analysis of plasma-induced modification of ULK and eULK Materials: Dual damascene processing challenges for 45nm (κ ≤ 2.4) and beyond BEOL technologies
- N. Fuller
- M.A. Worsley
- et al.
- 2006
- IITC 2006
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10 results for S. Bent
Plasma induced dielectric modification: Etching challenges for 65nm and beyond technology nodes
- N. Fuller
- M.A. Worsley
- et al.
- 2005
- ISTC 2005
The study of modified layers in SiCOH dielectrics using spectroscopic ellipsometry
- Marcus A. Worsley
- Stacey F. Bent
- et al.
- 2003
- MRS Proceedings 2003
Plasma ash processing solutions for advanced interconnect technology
- N. Fuller
- M.A. Worsley
- et al.
- 2008
- Thin Solid Films
Effect of radical species density and ion bombardment during ashing of extreme ultralow- κ interlevel dielectric materials
- M.A. Worsley
- S. Bent
- et al.
- 2007
- Journal of Applied Physics
Characterization of neutral species densities in dual frequency capacitively coupled photoresist ash plasmas by optical emission actinometry
- M.A. Worsley
- S. Bent
- et al.
- 2006
- Journal of Applied Physics
Detection of open or closed porosity in low-κ dielectrics by solvent diffusion
- Marcus A. Worsley
- Mark Roberts
- et al.
- 2005
- Microelectronic Engineering
Effect of plasma interactions with low-κ films as a function of porosity, plasma chemistry, and temperature
- Marcus A. Worsley
- Stacey F. Bent
- et al.
- 2005
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Etching, insertion, and abstraction reactions of atomic deuterium with amorphous silicon hydride films
- C.M. Chiang
- S. Gates
- et al.
- 1997
- Journal of Physical Chemistry B
Infrared study of the reactions of atomic deuterium with amorphous silicon monohydride
- Szetsen S. Lee
- Maynard J. Kong
- et al.
- 1996
- Journal of Physical Chemistry