Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
- D. Edelstein
- H.S. Rathore
- et al.
- 2004
- IRPS 2004
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23 results for T. Dalton
Ash-induced modification of porous and dense SiCOH inter-level-dielectric (ILD) materials during damascene plasma processing
- T. Dalton
- N. Fuller
- et al.
- 2004
- IITC 2004
Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
- D. Edelstein
- H.S. Rathore
- et al.
- 2004
- IRPS 2004
Porous ILD process development for sub 100nm integration
- K. Malone
- S.T. Chen
- et al.
- 2003
- ADMETA 2003
A 90nm dual damascene hybrid (organic / inorganic) low-k - Copper BEOL integration scheme
- T. Dalton
- A. Cowley
- et al.
- 2003
- ADMETA 2003
The study of modified layers in SiCOH dielectrics using spectroscopic ellipsometry
- Marcus A. Worsley
- Stacey F. Bent
- et al.
- 2003
- MRS Proceedings 2003
A high performance 0.13 μm copper BEOL technology with low-k dielectric
- R.D. Goldblatt
- B.N. Agarwala
- et al.
- 2000
- IITC 2000
Plasma ash processing solutions for advanced interconnect technology
- N. Fuller
- M.A. Worsley
- et al.
- 2008
- Thin Solid Films
Effect of radical species density and ion bombardment during ashing of extreme ultralow- κ interlevel dielectric materials
- M.A. Worsley
- S. Bent
- et al.
- 2007
- Journal of Applied Physics
Characterization of neutral species densities in dual frequency capacitively coupled photoresist ash plasmas by optical emission actinometry
- M.A. Worsley
- S. Bent
- et al.
- 2006
- Journal of Applied Physics