Selective epitaxial channel ground plane thin SOI CMOS devices
- Zhibin Ren
- M. Ieong
- et al.
- 2005
- IEDM 2005
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27 results for Diane C. Boyd
Device Design Considerations for Ultra-Thin SOI MOSFETs
- B. Doris
- M. Ieong
- et al.
- 2003
- IEDM 2003
Issues in NiSi-gated FDSOI device integration
- Jakub Kedzierski
- Diane Boyd
- et al.
- 2003
- IEDM 2003
Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs
- K. Rim
- K.K. Chan
- et al.
- 2003
- IEDM 2003
Threshold voltage control in NiSi-gated MOSFETs through silicidation induced impurity segregation (SIIS)
- Jakub Kedzierski
- Diane Boyd
- et al.
- 2003
- IEDM 2003
High Performance CMOS Fabricated on Hybrid Substrate with Different Crystal Orientations
- M. Yang
- M. Ieong
- et al.
- 2003
- IEDM 2003
Electrical integrity of state-of-the-art 0.13 μm SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication
- K.W. Guarini
- A. Topol
- et al.
- 2002
- IEDM 2002
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
- Jakub Kedzierski
- Edward Nowak
- et al.
- 2002
- IEDM 2002
Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
- Min Yang
- Evgeni P. Gusev
- et al.
- 2003
- IEEE Electron Device Letters
A high-speed, high-sensitivity silicon lateral trench photodetector
- Min Yang
- Kern Rim
- et al.
- 2002
- IEEE Electron Device Letters