Issues in NiSi-gated FDSOI device integration

Abstract

Thin-body fully depleted silicon on insulator (FDSOI) devices with NiSi metal gates were fabricated with gate lengths down to 20nm. Specific issues in the integration of the NiSi-gated FDSOI devices were investigated, in particular: gate CMP, the phase stability of the nickel suicide, and parasitic resistance.