Challenges and opportunities for high performance 32 nm CMOS technology
- J. Sleight
- I. Lauer
- et al.
- 2006
- IEDM 2006
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27 results for Omer H. Dokumaci
Stress memorization in high-performance FDSOI devices with ultra-thin silicon channels and 25nm gate lengths
- D. Singh
- J. Sleight
- et al.
- 2005
- IEDM 2005
Selective epitaxial channel ground plane thin SOI CMOS devices
- Zhibin Ren
- M. Ieong
- et al.
- 2005
- IEDM 2005
Aggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
- et al.
- 2004
- IEDM 2004
Tunnel Current Measurements on P/N Junction Diodes and Implications for Future Device Design
- Paul M. Solomon
- David J. Frank
- et al.
- 2003
- IEDM 2003
Extreme scaling with ultra-thin Si channel MOSFETs
- Bruce Doris
- Meikei Ieong
- et al.
- 2002
- IEDM 2002
Examination of hole mobility in ultra-thin body SOI MOSFETs
- Zhibin Ren
- Paul M. Solomon
- et al.
- 2002
- IEDM 2002
Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs
- H. Nayfeh
- D. Singh
- et al.
- 2006
- IEEE Electron Device Letters
Transient enhanced diffusion and dose loss of indium in silicon
- Omer Dokumaci
- Paul Ronsheim
- et al.
- 1999
- MRS Spring Meeting 1999
Nitrogen implantation and diffusion in silicon
- Lahir Shaik Adam
- Mark E. Law
- et al.
- 1999
- MRS Spring Meeting 1999