Sub-30 nm P+ abrupt junction formation in strained Si/Si1-xGex MOS device
- K.L. Lee
- J.O. Chu
- et al.
- 2002
- IEDM 2002
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12 results for Huilong Zhu
Modeling of the diffusion of implanted boron in strained Si/Si1-xGex
- Huilong Zhu
- Kam-Leung Lee
- et al.
- 2002
- SISPAD 2002