Structure, design and process control for Cu bonded interconnects in 3D integrated circuitsKuan-Neng ChenSang Hwui Leeet al.2006IEDM 2006
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyondV. NarayananV.K. Paruchuriet al.2006VLSI Technology 2006
Critical aspects of layer transfer and alignment tolerances for 3D integration processesD.C. La TulipeL.T. Shiet al.2006GBC 2006
Integration of local stress techniques with strained-Si directly on insulator (SSDOI) substratesHaizhou YinZ. Renet al.2006VLSI Technology 2006
Novel approach to reduce source/drain series resistance in high performance CMOS devices using self-aligned CoWP process for 45nm node UTSOI transistors with 20nm gate lengthJames PanAnna Topolet al.2006VLSI Technology 2006
Hybrid-orientation technology (HOT): Opportunities and challengesMin YangVictor W.C. Chanet al.2006IEEE Transactions on Electron Devices