Enhanced cracking resistance of plasma deposited low k SiCOH films with nano imbedded layers
- Son Nguyen
- Eric Liniger
- et al.
- 2007
- ECS Meeting 2007
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27 results for Thomas Ivers
Optimization of silicon technology for the IBM System z9
- Daniel J. Poindexter
- Scott R. Stiffler
- et al.
- 2007
- IBM J. Res. Dev
Non-poisoning dual damascene patterning scheme for low-k and ultra low-k BEOL
- W. Cote
- D. Edelstein
- et al.
- 2006
- ADMETA 2006
A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
A porous SiCOH dielectric with k=2.4 for high performance BEOL interconnects
- S. Gates
- A. Grill
- et al.
- 2006
- ADMETA 2006
High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography
- S. Narasimha
- K. Onishi
- et al.
- 2006
- IEDM 2006
65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- V. McGahay
- G. Bonilla
- et al.
- 2006
- IITC 2006
A SiCOH BEOL interconnect technology for high density and high performance 65 nm CMOS applications
- Matthew Angyal
- Jason Gill
- et al.
- 2005
- AMC 2005
PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- K. Ida
- S. Nguyen
- et al.
- 2005
- AMC 2005
BEOL process integration with Cu/SiCOH (k=2.8) low-k interconnects at 65nm groundrules
- S. Lane
- M. Fukasawa
- et al.
- 2005
- AMC 2005