40-Gb/s circuits built from a 120-GHz f T SiGe technology
- Greg Freeman
- Mounir Meghelli
- et al.
- 2002
- IEEE Journal of Solid-State Circuits
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21 results for S. Subbanna
HBT low-noise performance in a 0.18 μm SiGe BiCMOS technology
- D.R. Greenberg
- D. Ahlgren
- et al.
- 2000
- RFIC 2000
High-performance 0.08 μm CMOS
- L. Su
- S. Subbanna
- et al.
- 1996
- VLSI Technology 1996
Phase edge lithography for sub 0.1 μm electrical channel length in a 200 MM full CMOS process
- P. Agnello
- T. Newman
- et al.
- 1995
- VLSI Technology 1995
113-GHz f T graded-base SiGe HBTs
- E.F. Crabbé
- B. Mcyerson
- et al.
- 1993
- Device Research Conference 1993
Foundation of rf CMOS and SiGe BiCMOS technologies
- James S. Dunn
- David C. Ahlgren
- et al.
- 2003
- IBM J. Res. Dev
50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs
- Seshadri Subbanna
- Gregory Freeman
- et al.
- 2002
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICS
- S. Subbanna
- L. Larson
- et al.
- 2001
- Proceedings of the Custom Integrated Circuits Conference
Noise performance and considerations for integrated RF/analog/mixed-signal design in a high-performance SiGe BiCMOS technology
- D.R. Greenberg
- S. Sweeney
- et al.
- 2001
- Technical Digest - International Electron Devices Meeting
HBT low-noise performance in a 0.18 μm SiGe BiCMOS technology
- D.R. Greenberg
- D. Ahlgren
- et al.
- 1999
- IMS 1999