A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, f T/fMAX of 15/14 GHz VPNP, and fT/f MAX of 60/125 GHz HBT
- P. Candra
- M. Dahlström
- et al.
- 2008
- BCTM 2008
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10 results for J. Dunn
A 0.35 μm SiGe BiCMOS technology for power amplifier applications
- Alvin Joseph
- Qizhi Liu
- et al.
- 2007
- BCTM 2007
SiGe BiCMOS trends - today and tomorrow
- J. Dunn
- D.L. Harame
- et al.
- 2006
- CICC 2006
A BiCMOS technology featuring a 300/330 GHz (fT/fmax) SiGe HBT for millimeter wave applications
- B. Orner
- M. Dahlström
- et al.
- 2006
- BCTM 2006
Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors
- S. Voldman
- P. Juliano
- et al.
- 2000
- EOS/ESD 2000
Status and direction of communication technologies - SiGe BiCMOS and RFCMOS
- Alvin J. Joseph
- David L. Harame
- et al.
- 2005
- Proceedings of the IEEE
Foundation of rf CMOS and SiGe BiCMOS technologies
- James S. Dunn
- David C. Ahlgren
- et al.
- 2003
- IBM J. Res. Dev
50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs
- Seshadri Subbanna
- Gregory Freeman
- et al.
- 2002
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICS
- S. Subbanna
- L. Larson
- et al.
- 2001
- Proceedings of the Custom Integrated Circuits Conference
Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors
- S. Voldman
- P. Juliano
- et al.
- 2000
- Annual Proceedings - Reliability Physics (Symposium)