Impact of back bias on ultra-thin body and BOX (UTBB) devices
- Q. Liu
- Frederic Monsieur
- et al.
- 2011
- VLSI Technology 2011
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45 results for Kangguo Cheng
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Circuits 2011
Ultra-thin Body and BOX (UTBB) device for aggressive scaling of CMOS technology
- Q. Liu
- A. Yagishita
- et al.
- 2011
- CSTIC 2011
High-performance partially depleted SOI PFETs with in situ doped sige raised source/drain and implant-free extension
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2011
- IEEE Electron Device Letters
Extremely thin SOI (ETSOI) technology: Past, present, and future
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2010
- IEEE International SOI Conference 2010
Hot-carrier degradation in undoped-body etsoi fets and soi finfets
- Miaomiao Wang
- Pranita Kulkarni
- et al.
- 2010
- IRPS 2010
Challenges and opportunities of extremely thin SOI (ETSOI) CMOS technology for future low power and general purpose system-on-chip applications
- A. Khakifirooz
- Kangguo Cheng
- et al.
- 2010
- VLSI-TSA 2010
Ultra-thin-body and BOX (UTBB) Fully Depleted (FD) device integration for 22nm node and beyond
- Q. Liu
- A. Yagishita
- et al.
- 2010
- VLSI Technology 2010
Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2010
- ISSCC 2010
Challenges and solutions of extremely thin SOI (ETSOI) for CMOS scaling to 22nm node and beyond
- Kangguo Cheng
- Ali Khakifirooz
- et al.
- 2010
- CSTIC 2010