Impact of back bias on ultra-thin body and BOX (UTBB) devices
Q. Liu, Frederic Monsieur, et al.
VLSI Technology 2011
We report partially depleted silicon-on-insulator p-channel field-effect transistors fabricated with a 32-nm-technology ground rule and featuring SiGe raised source/drain, SiGe channel, and implant-free extension formation process. A respectable drive current of 950 μAm is obtained at an off current of 100 nAμm, VDD = 1V, and a contacted gate pitch of 130 nm. Furthermore, when the transistor width is scaled down to 100 nm, the saturation transconductance increases by about 15%, leading to a drive current of 1100 μAm. © 2006 IEEE.
Q. Liu, Frederic Monsieur, et al.
VLSI Technology 2011
Ramachandran Muralidhar, Isaac Lauer, et al.
IEEE T-ED
Jeng-Bang Yau, Jin Cai, et al.
VLSI-TSA 2009
Jae-Sung Rieh, Jin Cai, et al.
IEEE Transactions on Electron Devices