Marco Bellini, Tianbing Chen, et al.
BCTM 2006
We report partially depleted silicon-on-insulator p-channel field-effect transistors fabricated with a 32-nm-technology ground rule and featuring SiGe raised source/drain, SiGe channel, and implant-free extension formation process. A respectable drive current of 950 μAm is obtained at an off current of 100 nAμm, VDD = 1V, and a contacted gate pitch of 130 nm. Furthermore, when the transistor width is scaled down to 100 nm, the saturation transconductance increases by about 15%, leading to a drive current of 1100 μAm. © 2006 IEEE.
Marco Bellini, Tianbing Chen, et al.
BCTM 2006
Ruilong Xie, Chanro Park, et al.
VLSI Technology 2019
Xinlin Wang, Phil Oldiges, et al.
SISPAD 2005
Ramachandran Muralidhar, Jin Cai, et al.
IEEE Electron Device Letters