Impact of high-κ and SiO2 interfacial layer thickness on low-frequency (1/f) noise in aggressively scaled metal gate/HfO2 n-MOSFETs: role of high-κ phonons
- P. Srinivasan
- B.P. Linder
- et al.
- 2007
- Microelectronic Engineering
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96 results for Barry P. Linder
Examination of flatband and threshold voltage tuning of HfO2/TiN field effect transistors by dielectric cap layers
- S. Guha
- V.K. Paruchuri
- et al.
- 2007
- Applied Physics Letters
Dielectric breakdown mechanisms in gate oxides
- Salvatore Lombardo
- James H. Stathis
- et al.
- 2005
- Journal of Applied Physics
Characterization of breakdown in ultrathin oxides by hot carrier emission
- J.C. Tsang
- B.P. Linder
- 2004
- Applied Physics Letters
Modeling of energy distributions for plasma implantation
- Barry P. Linder
- Nathan W. Cheung
- 2001
- Surface and Coatings Technology
Gate oxide breakdown under Current Limited Constant Voltage Stress
- B.P. Linder
- J.H. Stathis
- et al.
- 2000
- Digest of Technical Papers-Symposium on VLSI Technology