Y.-H. Kim, C. Cabral Jr., et al.
IEDM 2005
Ultra-thin oxide reliability has become an important issue in integrated circuit scaling. Present reliability methodology stresses oxides with a low impedance voltage source. This, though, does not represent the stress under circuit configurations, in which transistors are driven by other transistors. A Current Limited Constant Voltage Stress simulates circuit stress well. Limiting the current during the breakdown event reduces the post-breakdown conduction. Limiting the current to a sufficiently low value may prevent device failure, altogether.
Y.-H. Kim, C. Cabral Jr., et al.
IEDM 2005
J.H. Stathis, J. Chapple-Sokol, et al.
Applied Physics Letters
E. Cartier, V. Narayanan, et al.
VLSI Technology 2004
B.P. Linder, D.J. Frank, et al.
VLSI Technology 2001