Breakdown transients in ultra-thin gate oxynitrides
- S. Lombarde
- F. Palumbo
- et al.
- 2004
- ICICDT 2004
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96 results for Barry P. Linder
Dual workfunction fully silicided metal gates
- C. Cabral Jr.
- J. Kedzierski
- et al.
- 2004
- VLSI Technology 2004
Characterization of breakdown in ultrathin oxides by hot carrier emission
- J.C. Tsang
- B.P. Linder
- 2004
- Applied Physics Letters
Effect and model of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- INFOS 2003
Statistics of progressive breakdown in ultra-thin oxides
- B.P. Linder
- J.H. Stathis
- 2003
- INFOS 2003
Critical Assessment of Soft Breakdown Stability Time and the Implementation of New Post-Breakdown Methodology for ultra-thin gate oxides
- E. Wu
- J. Suñé
- et al.
- 2003
- IEDM 2003
Influence and model of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- Microelectronics Reliability
Reliability of ultra-thin oxides in CMOS circuits
- J.H. Stathis
- B.P. Linder
- et al.
- 2003
- Microelectronics Reliability
Circuit implications of gate oxide breakdown
- J.H. Stathis
- R. Rodríguez
- et al.
- 2003
- Microelectronics Reliability
Modeling and experimental verification of the effect of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- IRPS 2003